The Insight into Cu-Cu direct bonding of 3DIC
plasma or acid, which works better?
DOI:
https://doi.org/10.47611/jsrhs.v13i3.7429Keywords:
3DIC, Cu-Cu Bonding, plasma treatment, acid treatmentAbstract
This paper presents study on the manufacturing process of Cu-Cu direct bonding for 3DIC. Main procedures include RCA cleaning, SiO2 film growth, lithography, E-gun deposition, adhesion layer deposition, cleaning and Cu oxide layer removal, dicing, and bonding. Of the two cleaning methods—plasma treatment and acid treatment—employed on wafers, the one with plasma treatment demonstrate superior bonding strength.
The study results encompass SEM, pull tests, SAT, and TEM examination results on bonding condition of wafer with both plasma and acid treatment. This research offers insights into optimizing the fabrication process for enhanced performance in Cu-Cu direct bonding for 3DIC applications.
Downloads
References or Bibliography
https://www.sciencedirect.com/topics/engineering/thermocompression-bonding
ttps://www.inrf.uci.edu/wordpress/wp-content/uploads/sop-wet-silicon-rca-1.pdf
TRIBOLOGY AND CHARACTERIZATION OF SURFACE COATINGS Edited by Sarfraj Ahmed and Vinayak S. Dakre Copyright: 2021 ISBN: 9781119818786 - Scientific Figure on ResearchGate. Available from: https://www.researchgate.net/figure/Schematic-diagram-of-the-physical-vapor-deposition-PVD_fig2_357734945 [accessed 3 Jan, 2024]
https://www.sciencedirect.com/science/article/abs/pii/S1526612520305624
Published
How to Cite
Issue
Section
Copyright (c) 2024 Ko-Hsin Chen
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
Copyright holder(s) granted JSR a perpetual, non-exclusive license to distriute & display this article.
